| 摘要 |
PROBLEM TO BE SOLVED: To hold excellent ohmic contact of a semiconductor layer with a transparent conductive body and obtain uniform light-emitting pattern without decreasing external light-emitting efficiency, by a method wherein a transmtssive electrode of an extremely thin film is formed between a p type gallium nitride based compound semiconductor layer and the transparent conductive body. SOLUTION: An n type gallium nitride based compound semiconductor layer 2 and a p type gallium nitride based compound semiconductor layer 3 are sequentially laminated on a sapphire substrate 1. Here, a transmissive electrode 4 is formed on the p type gallium nitride based compound semiconductor layer 3 and further a pad electrode 5 is overlapped. Next, a transparent conductive body film 6 is formed on the pad electrode 5, its part is removed to expose a surface of the pad electrode 5, and an Au wire 8 is connected to come into electrical contact with the outside. Thus, a transmissive electrode 4 is introduced between the p type gallium nitride based compound semiconductor layer 3 and the transparent conductive body film 6, so that excellent ohmic characteristic can be obtained and current diffusion is made uniform. |
