| 摘要 |
PROBLEM TO BE SOLVED: To obtain a multiport semiconductor memory device which can restrain an area from being increased and which can realize a low power consumption. SOLUTION: The gate of a transistor TW1 is connected to a write word line WLW, a diffusion layer on one side is connected to a write bit line BLW, a diffusion layer on the other side is connected to a node N1, the gate of a transistor TW2 is connected to the node N1, the diffusion layer on one side is connected to a node N2, the diffusion layer on the other side is grounded, and a write port is formed. Then, the gate of a transistor TR1 is connected to a read word line WLR, the diffusion layer on one side is connected to a read bit line BLR, the diffusion layer on the other side is connected to the diffusion layer, on one side of a transistor TR2 the gate of the transistor TR2 is connected to the node N2, the diffusion layer on the other side is grounded, and a read port is formed. As a result, the number of transistors constituting a memory cell can be reduced, and a multiport memory whose power consumption is low can be realized. |
