发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To detect the increase of circuit current due to abnormality in a circuit consisting of a MOS transistor with a lower threshold voltage(Vt) composing a semiconductor integrated circuit. SOLUTION: An inspected circuit 230 is composed of an address buffers 231,..., and a timing generator 234 which are circuit blocks consisting of low voltage MOS transisters TLP, TLN. A test enable signal TE to indicate an inspection, a motion selection signal/OP to indicate a motion and block selection signals S11-S61 to select a desired circuit block are supplied. In the case of inspection, in order to supply either of the detection currents I11-I61 of each circuit block selected by turning any of block selection signals S11-S61 and the test enable signal TE into H to the inspection circuit, the inspection circuit is equipped with NMOS transisters THN11-THN61 and PMOS transisters THP 11-THP 61 which are high in voltage.
申请公布号 JPH1138099(A) 申请公布日期 1999.02.12
申请号 JP19980098632 申请日期 1998.04.10
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NISHIMURA KAZUKO;AKAMATSU HIRONORI;MATSUZAWA AKIRA
分类号 G01R31/28;G06F11/22;H01L21/66;H01L21/822;H01L27/04 主分类号 G01R31/28
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