发明名称 BARIUM TITANATE-BASE SEMICONDUCTOR CERAMIC
摘要 <p>A barium titanate-base semiconductor ceramic containing BaTiO3 as a main component and Ba2TiSi2O8 and BanTimOn+2m (wherein 1≤n≤4, 2≤m≤13, n∫m as a composition in a very small amount phase, wherein the Ba2TiSi2O8 to BanTimOn+2m ratio is 0.5 to 80.0. It has excellent withstand voltage and can ensure high reliability as product devices. Further, it has a suitable specific resistance ς25 at room temperature for providing satisfactory functions as product devices.</p>
申请公布号 WO1999012863(P1) 申请公布日期 1999.03.18
申请号 JP1998003923 申请日期 1998.09.02
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