NON-VOLTAGE SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To extend the operating range of a memory cell transistor by accurate ly controlling the writing to a memory cell transistor. SOLUTION: A word line 32 is connected to the control gate of a memory cell transistor 31, and a bit line 33 and a source line 34 are connected to the source side and the drain side. A writing clockϕSW having a fixed pulse height value is applied to the source line 34 from a writing clock generating circuit 37, a ground potential or a power source potential is applied to the bit line 32 responding to a reading out clockϕR having an opposite phase of the writing clockϕSW. A row selecting clockϕLW synchronizing with the writing clockϕSW and reducing a pulse height by stages as a potential VBL of the bit line 33 when read-out is raised is applied to the word line 32 from a selecting clock generating circuit 38.