| 摘要 |
<p>A high-voltage semiconductor device is realized by reducing the area dedicated to termination. In the termination area of a semiconductor device, a plurality of trenches (9) are formed around a main junction section (1). A p+ layer or Schottky contact is formed at the bottom of each trench (9) and between adjacent trenches (9). An n- layer (4) is formed between the trenches so that a depletion layer is extended between the p+ layer at the bottom of the trenches and the p+ layer between the trenches.</p> |
