SEMICONDUCTOR DEVICE AND OPERATION THEREOF

摘要

PROBLEM TO BE SOLVED: To provide the semiconductor device which can achieve high-speed operation, low voltage and low power consumption, and operates as a non- volatile memory in the long life with the high holding action being maintained. SOLUTION: On the surface of a silicon substrate 31, an n-type well region 32 is formed. At the surface of the well region, a source region 33 comprising WSi2 is embedded. At the other position of the surface of the n-type well region 32, a drain region 34 comprising an n<+> layer is formed. On the n-type well region 32, the source region 33 and the drain region 34, the first gate insulating film 35 comprising SiO2 is formed. On the film 35, a floating gate electrode 36 comprising silicon nitride(SiN) is formed. On the floating gate electrode 36, the second gate insulating film 37 comprising SiO2 is formed. Over the film 37, a control gate electrode 38 comprising polysilicon is formed.