| 摘要 |
<p>A method of producing a dielectric separation wafer, wherein, in a photolithographic step for providing a resist film (12) having a window portion (12a) on the front surface of a silicon wafer (10), a rear surface resist (12A) is applied to the silicon wafer (10) and then is exposed over the entire surface for crosslinking, thereby preventing a melting loss at the periphery portion of the rear-surface resist (12A) at a time of developing/rinsing performed for avoiding the crushing of the window portion (12a) otherwise caused by the rear-surface resist (12A) that has spread around up to the front surface of the wafer. After polishing the front surface of the dielectric separation wafer, low-temperature polysilicon is deposited on the front surface of the wafer or SOG is applied for firing, so that a recess (16a) produced by the polishing of the front surface of the wafer is filled in. Then the low-temperature polysilicon layer (30) or the SOG layer is removed from the front surface by polishing leaving the filled-in portion of the recess (16a) unremoved, thereby making it possible to flatten the front surface of the dielectric separation wafer.</p> |
