发明名称 |
CONNECTION PART HAVING DOUBLE-METAL, DOUBLE-STUD STRUCTURE |
摘要 |
A metal interconnect having a high conductivity and high resistance to metal migration failure is formed of two layers of metal or alloy (such as TI/cuAlsi) with a dielectric interposed therebetween and a connection made between the layers by a conductive material, preferably in the form of a plug or stud formed in an aperture of an inter-level dielectric, at ends of the interconnect. A high precision metal-to-metal capacitor can be formed from the same layers by forming separate connections to each of the layers. The topography of the interconnect (and capacitor) is of reduced severity and facilitates planarization of an overlying inter-level dielectric. <IMAGE> |
申请公布号 |
KR100252613(B1) |
申请公布日期 |
2000.04.15 |
申请号 |
KR19970010305 |
申请日期 |
1997.03.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LIAN JAMES LEE;ELL-KALE BADI |
分类号 |
H01L21/02;H01L21/768;H01L21/822;H01L21/8242;H01L23/522;H01L23/532;H01L27/04;H01L27/108;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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