发明名称 |
Supraledande transistoranordning och ett förfarande relanterande därtill |
摘要 |
The present invention relates on an interferometer arrangement comprising a source electrode and a drain electrode, a base electrode to which the source electrode and the drain electrode are connected through tunnel barriers, the base electrode thus forming a double barrier quantum well, and first and second superconducting gate electrodes to control the source-drain current. The base electrode comprises a ferromagnetic material enabling resonant tunneling of source-drain electrons when there are bound states within the quantum well structure matching the energy of said source-drain electrons. The invention also relates to a logical element comprising such an interferometer arrangement and to a method of controlling the conductance of an interferometer. |
申请公布号 |
SE9804088(L) |
申请公布日期 |
2000.05.28 |
申请号 |
SE19980004088 |
申请日期 |
1998.11.27 |
申请人 |
ERICSSON TELEFON AB L M |
发明人 |
IVANOV ZDRAVKO;SHEKHTER ROBERT;KADIQROBOV ANATOLI;CLAESON TORD;JONSON MATS;WIKBORG ERLAND |
分类号 |
H01L39/22;(IPC1-7):H01L39/22;H01L27/18;H01L29/15;H03K19/195 |
主分类号 |
H01L39/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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