发明名称 Supraledande transistoranordning och ett förfarande relanterande därtill
摘要 The present invention relates on an interferometer arrangement comprising a source electrode and a drain electrode, a base electrode to which the source electrode and the drain electrode are connected through tunnel barriers, the base electrode thus forming a double barrier quantum well, and first and second superconducting gate electrodes to control the source-drain current. The base electrode comprises a ferromagnetic material enabling resonant tunneling of source-drain electrons when there are bound states within the quantum well structure matching the energy of said source-drain electrons. The invention also relates to a logical element comprising such an interferometer arrangement and to a method of controlling the conductance of an interferometer.
申请公布号 SE9804088(L) 申请公布日期 2000.05.28
申请号 SE19980004088 申请日期 1998.11.27
申请人 ERICSSON TELEFON AB L M 发明人 IVANOV ZDRAVKO;SHEKHTER ROBERT;KADIQROBOV ANATOLI;CLAESON TORD;JONSON MATS;WIKBORG ERLAND
分类号 H01L39/22;(IPC1-7):H01L39/22;H01L27/18;H01L29/15;H03K19/195 主分类号 H01L39/22
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