| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to reduce a manufacturing cost by simplifying a manufacturing process, and to improve a high frequency characteristic by reducing parasitic capacitance. CONSTITUTION: A method for manufacturing a semiconductor device comprises the steps of: sequentially forming an n+ InGaAs sub collector layer(b), an n- InP collector layer(c), an n- InGaAsP grading layer(d), a p+ InGaAs base layer(e), an n- InP emitter layer(f), and an n+ InGaAs emitter cap layer(g), on a half-insulated InP substrate(a); applying and selectively etching emitter metal on the n+ InGaAs emitter cap layer, and lifting off the emitter metal; sequentially etching the n+ InGaAs emitter cap layer and n- InP emitter layer with selective etching solution, using the emitter metal as a mask; etching the p+ InGaAs base layer and n- InGaAsP grading layer, with etching solution selectively etching InGaAs and InGaAsP only compared with InP, after covering a base region with photoresist, and etching the n- InP collector layer with selective InP etching solution; and eliminating the photoresist to form a new collector metal pattern, and forming a base metal and a collector metal simultaneously by lifting off the metal.
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