| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a photoelectric conversion element which is provided with a p-n junction and whose photoelectric conversion efficiency can be enhanced by a method wherein a p-type Cu2O region and an n-type TiO2 region in which a p-n junction is adjacent are provided. SOLUTION: A first electrode layer 1e, an n-type semiconductor layer 1n comprising an n-type TiO2 region, a p-type semiconductor layer 1p comprising a p-type Cu2O region and a second electrode layer 2e are formed sequentially on a transparent substrate 1t. At this time, a p-n junction as a heterojunction is constituted in the boundary between the p-type semiconductor layer 1p and the second electrode layer 2e. Then, when light in an ultraviolet region to a blue region (300 to 500 nm) is incident on the junction via the transparent substrate 1t, hole-election pairs (carriers) are generated by responding to the incident light. The respective generated carriers are taken out to the outside as a photoelectric current via an electrode pad 1pd and an electrode pad 2pd which are installed at the electrode layer 1e and the electrode layer 2e. In addition, the crystal state of the p-type semiconductor layer 1p and the n-type semiconductor layer 1n is polycrystalline. Thereby, the photoelectric conversion efficiency of this photoelectric conversion element can be enhanced.</p> |
