发明名称 Doped aluminum nitride crystals and methods of making them
摘要 Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.
申请公布号 US9525032(B2) 申请公布日期 2016.12.20
申请号 US201414225999 申请日期 2014.03.26
申请人 CRYSTAL IS, INC. 发明人 Slack Glen A.;Schowalter Leo J.
分类号 C30B29/38;H01L29/20;C30B23/00;C30B29/40 主分类号 C30B29/38
代理机构 Morgan, Lewis & Bockius LLP 代理人 Morgan, Lewis & Bockius LLP
主权项 1. An extraction-activated bi-doped p-type AlN crystal doped with a plurality of VAlSi2N3 complexes.
地址 Green Island NY US