发明名称 |
Doped aluminum nitride crystals and methods of making them |
摘要 |
Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal. |
申请公布号 |
US9525032(B2) |
申请公布日期 |
2016.12.20 |
申请号 |
US201414225999 |
申请日期 |
2014.03.26 |
申请人 |
CRYSTAL IS, INC. |
发明人 |
Slack Glen A.;Schowalter Leo J. |
分类号 |
C30B29/38;H01L29/20;C30B23/00;C30B29/40 |
主分类号 |
C30B29/38 |
代理机构 |
Morgan, Lewis & Bockius LLP |
代理人 |
Morgan, Lewis & Bockius LLP |
主权项 |
1. An extraction-activated bi-doped p-type AlN crystal doped with a plurality of VAlSi2N3 complexes. |
地址 |
Green Island NY US |