| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide the structure of a window layer that can have light emission extracted efficiently to the outside, and can obtain satisfactory ohmic contact with a III-V compound semiconductor layer having a low resistance in an AlGaInP LED with the window layer made of a transparent metal oxide having conductivity. SOLUTION: A window layer is composed of a first metal oxide layer 106a, that is provided at the side of a light emission part and has a first refractive index n1, and a second metal oxide layer 106b that is provided at a side opposite to the light emission part of the first metal oxide layer 106a and has a second refractive index n2 which is smaller than the first one (n1>n2). The first metal oxide layer 106a is made of zinc oxide (ZnO), and the second metal oxide layer 106b is made of a compound oxide of indium oxide (In) and tin oxide (Sn).</p> |
