| 摘要 |
PROBLEM TO BE SOLVED: To prevent deflection, etc., due to thermal expansion by laminating a group III nitride compound semiconductor on a surface to form an element main part, while forming a conductor layer or semiconductor layer on the rear surface as of thermal expansion coefficient which is almost equal to that of the group III nitride compound semiconductor laminated on the surface. SOLUTION: For example, an n-clad layer 2 comprising silicon doped Al0.07 Ga0.93N, an active layer 3 of a multi-quantum well structure, and p-clad layer 4 are formed as a group III nitride compound semiconductor element on the surface of a silicon substrate 1. On the rear surface of silicon substrate 1, at least a single layer of conductor layer or semiconductor layer, for example, a rear-surface layer 5 comprising silicon doped Al0.07Ga0.93N is formed which has a thermal expansion coefficient almost equal to that of the group III nitride compound semiconductor element layer as a whole on the surface. So, even if expansion/contraction takes place on both front and rear surfaces of the silicon substrate 1, the silicon substrate 1 itself will not warp, and also cracking is suppressed. |
