Light emitting device

摘要

A light emitting device includes a metal layer, a light emitting structure, an electrode disposed on a first upper portion of a second conductive type semiconductor layer, a current spreading portion disposed on a second upper portion of the second conductive type semiconductor layer, an adhesive layer disposed under a first conductive type semiconductor layer, an insulating layer disposed between the electrode and the adhesive layer, a passivation layer disposed on a side surface of the light emitting structure and on a at least one upper surface of the light emitting structure, and a reflective layer disposed between the metal layer and the first conductive type semiconductor layer.

主权项

1. A light emitting device, comprising:
a metal layer; a light emitting structure comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; an electrode on a first upper portion of the second conductive type semiconductor layer; a current spreading portion on a second upper portion of the second conductive type semiconductor layer; an adhesive layer under the first conductive type semiconductor layer; an insulating layer between the electrode and the adhesive layer; a passivation layer on an inclined surface of the light emitting structure and on at least one upper surface of the light emitting structure; and a reflective layer between the metal layer and the first conductive type semiconductor layer; wherein the electrode has a first layer including Au, wherein the electrode contacts the current spreading portion, wherein an upper surface of the electrode has a first roughness, wherein an upper surface of the second conductive type semiconductor layer has a second roughness, and wherein the current spreading portion has an inclined surface.