| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a semi-conductor device to plate a desired film by operating the plating film characteristic including the film thickness and the film uniformity. SOLUTION: A substrate 155 is placed in plating bath 19, 59, a current in the bath 19, 59 is measured, and a film 110 is plated on a substrate 155. In one embodiment, the current is measured using a sensing array 57 disposed in the bath 19, 59, and the plating deposition parameter is controlled using the measured value. In an alternative embodiment, the current is measured using the detection array 57, and similarly, the characteristic of the plated film 110 is controlled using a corresponding control array 53 disposed in the plating bath 19, 59. |
