Titanium dioxide layer serving as a mask and its removed method

摘要

A titanium dioxide layer serving as a mask used in a manufacturing process of integrated circuit and its removed method are disclosed. The method includes the steps of forming a titanium dioxide layer on the integrated circuit device to serve as a mask, and using an etchant to selectively remove the titanium dioxide layer. The titanium dioxide layer is formed by the steps of providing a titanium-containing material, adding an acid substance to the titanium-containing material to form a mixture, and exposing the integrated circuit device to the mixture to form the titanium dioxide layer thereon.