| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemical amplification type resist composition excellent in adhesiveness to a substrate, dry etching resistance and developability as well as in transparency to ArF excimer laser light, resolution and sensitivity characteristics. SOLUTION: The chemical amplification type resist composition is a chemical amplification type positive type resist composition comprising a multiple copolymer of formula I having a weight average molecular weight (Mw) of 3,000-50,000 (expressed in terms of polystyrene) and a molecular weight distribution (Mw/Mn) of 1.0-3.0, a low molecular compound additive of formula V, an acid generating agent and a solvent. In the formula I, repeating units X and Y are each a monomer selected from the group comprising formulae II-IV. |
