RESIST PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To form resist patterns different in pattern density while keeping them high enough in lithography tolerance such as an exposure tolerance and a depth of focus. SOLUTION: After resist is applied on a substrate, a region where a logic with patterns arranged at random is formed is subjected to a first exposure process, using the interference of light penetrating through slit grooves 3 and 4 located on each side of the line of a pattern provided on a Levenson phase shift mask. The logic forming region and a region where a DRAM with repetitive patterns is formed are subjected to a second exposure process by the use of a photomask with a half tone part and a binary part and a 1/2 zonal lighting. A resist pattern is formed through an exposure process carried out twice.