| 发明名称 |
NEGATIVE RESIST PATTERN-FORMING METHOD, AND COMPOSITION FOR UPPER LAYER FILM FORMATION |
| 摘要 |
Provided is a negative resist pattern-forming method that enables a resist pattern with fewer development defects to be formed while favorable water repellency of the surface of the upper layer film is maintained. A negative resist pattern-forming method includes the steps of: forming a resist film using a radiation-sensitive resin composition; forming an upper layer film on one face of the resist film using a composition for upper layer film formation; subjecting the resist film having the upper layer film formed thereon to liquid immersion lithography; and developing the resist film subjected to the liquid immersion lithography with a developer solution containing an organic solvent, wherein at least one of the radiation-sensitive resin composition and the composition for upper layer film formation contains a fluorine atom. |
| 申请公布号 |
US2016299432(A1) |
申请公布日期 |
2016.10.13 |
| 申请号 |
US201615095774 |
申请日期 |
2016.04.11 |
| 申请人 |
JSR CORPORATION |
发明人 |
FURUKAWA Taiichi;OSAWA Sosuke |
| 分类号 |
G03F7/11;G03F7/32;G03F7/20 |
主分类号 |
G03F7/11 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A negative resist pattern-forming method comprising:
forming a resist film using a radiation-sensitive resin composition; forming an upper layer film on one face of the resist film using a composition for upper layer film formation; subjecting the resist film having the upper layer film formed thereon to liquid immersion lithography; and developing the resist film subjected to the liquid immersion lithography with a developer solution comprising an organic solvent, wherein at least one of the radiation-sensitive resin composition and the composition for upper layer film formation comprises a fluorine atom. |
| 地址 |
Minato-ku JP |
