METHOD FOR MANUFACTURING PREMETAL DIELECTRIC LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabrication method of a premetal dielectric layer of a semiconductor device is provided to improve a threshold voltage and to prevent a leakage current of a PMOS by preventing diffusion of boron ions into a silicon wafer. CONSTITUTION: An MOS transistor(13) having a source(S), a drain(D) and a gate(G) is formed on a silicon wafer(11). A liner nitride layer(15) is deposited on the resultant structure by PECVD(plasma enhanced CVD). Plasma treatment is then performed to the surface of the liner nitride layer(15) by using a UV(ultraviolet) ozone(O3) treatment, thereby removing hydrogen existed in the liner nitride layer(15). Then, a BPSG(boro-phosphor silicate glass) layer(16) as a premetal dielectric layer is deposited on the liner nitride layer(15).