HIGH VOLTAGE GENERATION CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A high voltage generation circuit of a semiconductor memory device is provided, which can generate a level of a high voltage(VPP) accurately without regard to a process variation during a test. CONSTITUTION: A high voltage detection circuit(16) generates a high voltage detection signal(VPPS1) by detecting a level variation of a high voltage(VPP). A high voltage detection circuit(30) generates a high voltage detection signal(VPPS2) of low level if the level of the high voltage is higher than a fixed level by inputting a reference voltage(EVREFP) and the high voltage, and generates a high voltage detection signal(VPPS2) of high level if the level of the high voltage becomes lower than the fixed level. A switch(32) generates a high voltage detection signal(VPPS2) being output from the high voltage detection circuit(30) in response to a test signal(PTEST), and generates a high voltage detection signal(VPPS1) being output from the high voltage detection circuit(30) in response to the test signal during a normal operation.