| 摘要 |
PROBLEM TO BE SOLVED: To prevent the occurrence of defective wafers due to thyristor phenomenon, related to an epitaxial wafer for a light-emitting diode of a single heterostructure or double heterostructure of AlGaAs group manufactured by a liquid- phase epitaxial growth. SOLUTION: The concentration of carbon contained near the interface of an n-type AlGaAs layer against a p-type AlGaAs layer is made lower than that for forming a p-type inversion layer. The epitaxial wafer such as this is manufactured, by allowing the growth rate of the AlGaAs layer to be 0.05 micron per minute or higher. |
