HIGH SENSITIVITY PHOTORESIST COMPOSITION CONTAINING SOLUBLE FILM FORMING DENDRIMER AND PATTERN FORMING METHOD USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a high sensitivity and high resolution photoresist composition developable with an organic solvent for use in E(electron) beam lithography. SOLUTION: The composition includes a high sensitivity soluble film forming photoresist composition of a dendrimer calix [4] arene derivative of formula (1) and forms a lithographic pattern together with a crosslinker selected from glycoluril derivatives capable of reacting with such dendrimers under the action of an acid catalyst, a photo-acid generating agent and an organic solvent. The composition is particularly useful for forming a high resolution (<100 nm) negative type image.