发明名称 |
Method and system for etching tunnel oxide to reduce undercutting during memory array fabrication |
摘要 |
A method and system for etching gate oxide during transistor fabrication is disclosed. The method and system begin by depositing a gate oxide on a substrate, followed by a deposition of a tunnel oxide mask over a portion of the gate oxide. The method and system further include performing a combination dry/wet-etch to remove the gate oxide uncovered by the tunnel oxide mask, which minimizes tunnel oxide undercut.
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申请公布号 |
US2002028583(A1) |
申请公布日期 |
2002.03.07 |
申请号 |
US20010925205 |
申请日期 |
2001.08.08 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KO KING WAI KELWIN;CHANG MARK S.;FANG HAO |
分类号 |
H01L21/28;H01L21/8247;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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