| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element, having a structure which can be formed with superior precision, without complicating manufacturing processes and which will not cause deterioration of crystallinity. SOLUTION: A light-emitting element is formed, which is provided with a selective crystal growth layer formed by selectively growing compound semiconductor of a wurtzite type, a first conductivity-type clad layer which is formed on the selective crystal growth layer, an active layer and a second conductivity- type clad layer. By forming active layers, which are stretched in parallel on different crystal faces, an active layer greater than diffusion length of atoms constituting a mixed crystal, and an active layer in which at least one out of composition and thickness is made different; a plurality of light-emitting wavelength regions in which the light-emitting wavelengths are different from each other are formed in the active layer; and current injection in each of the plural light emitting wavelength regions is made possible. By using the structure formed by selective growth, the change in band gap energy in the same active region is realized, and an element and a device can be formed having superior precision, without complicating manufacturing processes. |
