发明名称 SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR
摘要 <p>PROBLEM TO BE SOLVED: To remarkably improve connection reliability by easily securing sufficient standoff and improving the solder wetness of an electrode pad. SOLUTION: In an external electrode 8 provided on a semiconductor device 1 of P-VQFN as one of non-lead surface mounting, a metal plating layer 8b composed of a metal such as copper (Cu) and a solder plating layer 8c composed of a solder are respectively formed on the upper surface and lower surface of an electrode part 8a (on the mount face side and opposite side of a package 7). Sufficient initial standoff can be secured by these metal plating layer 8b and solder plating layer 8c and even in the case of solder reflow when mounting the semiconductor device 1, by having the metal plating layer 8b, which is not molten by heat, the inclination margin of the package 7 caused by interposing a foreign substance can be increased.</p>
申请公布号 JP2002124596(A) 申请公布日期 2002.04.26
申请号 JP20000317344 申请日期 2000.10.18
申请人 HITACHI LTD;HITACHI YONEZAWA ELECTRONICS CO LTD 发明人 SAITO NAOKI;KOBAYASHI SHOICHI
分类号 H01L23/12;H01L23/50;(IPC1-7):H01L23/12 主分类号 H01L23/12
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