| 摘要 |
PURPOSE: A method for fabricating a contact hole in a low dielectric insulation layer is provided to improve densification of a spin on dielectric(SOD) layer, by baking the SOD layer at 200 deg.C and by curing the SOD layer after a contact hole is formed. CONSTITUTION: A semiconductor substrate(11) is prepared in which predetermined interconnections are separated from one another. The SOD layer is applied on the semiconductor substrate to cover the interconnections. The SOD layer is baked at 200 deg.C. The SOD layer is selectively etched to form contact holes(13) exposing respective regions between the interconnections. The SOD layer having the contact hole is cured. The contact hole is cleaned.
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