METHOD FOR MANUFACTURING LOW-RESISTANCE AlN THIN FILM

摘要

PROBLEM TO BE SOLVED: To manufacture a low-resistance AlN thin film having sufficient electrical conductance that can be applied to a semiconductor device. SOLUTION: In a vacuum container where nitrogen and oxygen are introduced as atmospheric gas, a laser beam is applied to an AlN target and a carbon target such as graphite for aberration, thus forming the low-resistance AlN thin film containing carbon and oxygen on a heated substrate.