发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A NAND type semiconductor device is disclosed, in which a first insulating film embedded between the memory cell gates and between the memory cell gates and the selecting gate does not contain nitrogen as a major component, a second insulating film is formed on the first insulating film, and an interlayer insulating film is formed on the second insulating film whose major component is different from a major component of the second insulating film.
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申请公布号 |
US2002130355(A1) |
申请公布日期 |
2002.09.19 |
申请号 |
US20020098130 |
申请日期 |
2002.03.15 |
申请人 |
TAKEUCHI YUJI;ICHIGE MASAYUKI;GODA AKIRA |
发明人 |
TAKEUCHI YUJI;ICHIGE MASAYUKI;GODA AKIRA |
分类号 |
H01L21/283;H01L21/768;H01L21/8247;H01L23/522;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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