| 摘要 |
PURPOSE: To take an ohmic contact between a semiconductor layer and electrode material in a GaN semiconductor device. CONSTITUTION: In a manufacturing method which forms an n-GaN layer, a light emitting layer, and a p-GaN layer in order on a substrate, and forms an n electrode in the n-GaN layer after performing the etching for exposing a part of the n-GaN layer; the etching step is performed in the two stages of an etching step S204-1 by BCl3 gas and the etching step S204-2 by Cl2 gas. The surface of the n-GaN layer is exposed by the etching in the first stage, and a B(boron) contaminated layer is removed by the etching in the second stage.
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