发明名称 METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To improve safety by processing poisonous gas produced when gas whose poison is maglizible is made into a plasma and made to react on a substrate to be processed in such a case. SOLUTION: Plasma of oxidative gas produced by a plasma generating device 2, e.g. the plasma of oxygen gas or steam is guided into a processing chamber 11 and made to react on the substrate 19 to be processed, thereby performing ashing. At this time, when an electrode made of, for example, aluminum is provided to the substrate 19 to be processed with and exposed to the oxidative gas, poisonous ruthenium tetraoxide (RuO4) is produced. This poisonous gas is processed by discharge gas processing facilities 15 to improve the safety. The weighted mean time exposure limit value (TLV-TWA) of the ruthenium tetraoxide is not accurately known, but it is estimated as about 0.0002 p.p.m and considered to be very poisonous.</p>
申请公布号 JP2002319570(A) 申请公布日期 2002.10.31
申请号 JP20010121848 申请日期 2001.04.20
申请人 MITSUBISHI ELECTRIC CORP 发明人 KAWAI KENJI
分类号 B01D53/46;B01D53/34;B01J19/08;H01L21/302;H01L21/3065;(IPC1-7):H01L21/306 主分类号 B01D53/46
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