| 摘要 |
PURPOSE: A formation method of an insulating layer with a low dielectric constant is provided to enhance a permittivity compared to a porous film and to improve a thermal and a mechanical stabilities by using ANALCIME materials. CONSTITUTION: ANALCIME(Al16Si32O96) materials having a pore and an excellent mechanical strength are dispersed to a low dielectric material by a stirring method. The low dielectric material is then coated on a semiconductor substrate. The low dielectric material is then dried so as to remove solvents and treated by HMDS(Hexamethyl Disilazane) solutions. The low dielectric material is one selected from the group consisting of polymer of CxHyOz, SiOCxHy, and SiOHx. The atom rate of the ANALCIME materials is about 1 - 10%.
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