| 摘要 |
The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi<SUB>0.05-0.37</SUB>. Obtained is a hafnium silicide target superior in workability and embrittlement resistance, and suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO<SUB>2 </SUB>film, and the manufacturing method thereof.
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