| 摘要 |
<p>An optical semi-conductor component includes a current injection region and first level electrically insulating region(s), containing a contact layer of a gallium arsenide based alloy on an upper confinement layer of semi-conductor material. The component includes a first level insulating layer of dielectric material above the contact layer and a hooking layer between the contact layer and the insulating layer. <??>An optical semi-conductor component (10) includes a current injection region (I) and at least one first level (P1, P2) electrically insulating region, each containing a contact layer (5P, 5I) of a gallium arsenate (GaAs) based alloy, arranged on an upper confinement layer (23P, 23I) of semi-conductor material. The component also includes a first level insulating layer (7) of dielectric material above the contact layer. A hooking layer (6P) is interposed between the contact layer and the insulating layer to ensure their adherence. <??>An Independent claim is also included for a method for the fabrication of this optical semi-conductor component.</p> |
