发明名称 Light-emitting diodes with hetero-PN-junction
摘要 An organic light-emitting diode with high luminance and high efficiency comprising an anode, an organic pn-junction and a cathode layered sequentially in this order, wherein the organic pn-junction emits light by an electric current passing through the diode in an electric field applied between the anode and the cathode, characterized in that the organic pn-junction is composed of an organic p-type luminescent-semiconductor thin film and an organic n-type luminescent-semiconductor thin film, wherein one surface of the organic p-type luminescent-semiconductor thin film is in contact with the anode and another surface of the organic p-type luminescent-semiconductor thin film is in contact with the organic n-type luminescent-semiconductor thin film, and one surface of the organic n-type luminescent-semiconductor thin film is in contact with the cathode and another surface of the organic n-type luminescent-semiconductor thin film is in contact with the organic p-type luminescent-semiconductor thin film and wherein the diode satisfies all the conditions of the following equations 1 to 3:in which X1 denotes an absolute value of the electron affinity of the organic p-type luminescent-semiconductor, X2 denotes an absolute value of the electron affinity of the organic n-luminescent-semiconductor, IP1 denotes an ionization potential of the organic p-type luminescent-semiconductor and IP2 denotes an ionization potential of the organic n-type luminescent-semiconductor.
申请公布号 US6559473(B1) 申请公布日期 2003.05.06
申请号 US19970765681 申请日期 1997.06.16
申请人 HOECHST JAPAN LIMITED 发明人 YU NU;KANG WEN-BING;TOKIDA AKIHIKO
分类号 H01L51/00;H01L51/30;H01L51/50;(IPC1-7):H01L35/24;H01L33/00 主分类号 H01L51/00
代理机构 代理人
主权项
地址