JIG FOR SUPPORTING SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To allow the occurrence of a slip due to a silicon oxide film loss during heat treating to be suppressed.

SOLUTION: In the jig for supporting the semiconductor substrate at the heat treating time of the semiconductor substrate and formed of a silicon or a silicon compound in an internal material, a silicon oxide layer 1c and a silicon nitride film 1d on the silicon oxide layer are provided on the surface region brought into contact with at least the semiconductor substrate on the internal material 1b.

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