| 摘要 |
<P>PROBLEM TO BE SOLVED: To eliminate the deterioration of the characteristics of a crystal layer, for example, an active layer due to the thickness distribution of the layer. <P>SOLUTION: In a method for selective growth, the growth of the crystal layer on a substrate is interrupted during the course of selective growing of the crystalline layer on the substrate. When the growth is interrupted, the etching rate at a thicker portion becomes higher than that at a thinner portion and the thickness distribution is eliminated, even if the distribution occurs during the course of the selective growth. This method for selective growth is applied to the manufacture of a semiconductor light-emitting element, in which the selectively grown layer is formed on a crystal layer having a three-dimensional shape a the active layer. <P>COPYRIGHT: (C)2003,JPO |
