| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing composition which, when used in a CMP (chemical mechanical polishing) process of a semiconductor device having a copper film and a tantalum compound, exhibits a higher rate of polishing copper during polishing the copper surface and exhibits a lowered rate of polishing copper and a higher rate of polishing the tantalum compound during polishing the tantalum compound and to provide a polishing method using the composition. <P>SOLUTION: The polishing composition is one comprising (A) an abrasive, (B) an organic acid, (C) an oxidizing agent, (D) an antioxidant, (E) a polishing rate modifier, and (F) water, wherein the abrasive comprises particles prepared by coating inorganic particles comprising at least one member selected from among fumed silica, colloidal silica, fumed alumina, and colloidal alumina with an organic resin. <P>COPYRIGHT: (C)2004,JPO</p> |
