Electronic device comprising conductive regions and dummy regions

摘要

A device includes an epitaxial region extending into a front surface of a chip. A portion of the chip adjacent the epitaxial region defines a collector. A gate is provided in a trench extending into the epitaxial region from the front surface. An emitter includes a body extending into the epitaxial region at a first side of the trench and a source extending into the body region from the front surface at the trench. A dummy emitter extends into the epitaxial region from the front surface at a second side of the trench opposite said first side. The dummy emitter lacks the source. The gate extends along a first wall of the trench facing the emitter region. A dummy gate is formed in the trench in a manner electrically isolated from the gate and extending along a second wall of the trench opposite said first wall.

主权项

1. A method for integrating a power electronic device in a chip of semiconductor material of a first type of conductivity, comprising:
forming an epitaxial layer of a second type of conductivity extending into the chip from a front surface of the chip and comprising an epitaxial region, a portion of the chip between a rear surface of the chip opposite the front surface and the epitaxial layer defining a collector layer comprising a collector region, forming a body layer of the first type of conductivity extending into the epitaxial layer from the front surface, forming a gate region of conductive material in a trench extending from the front surface into the epitaxial layer through the body layer, forming a source region of the second type of conductivity extending into the body layer from the front surface at a first side of said trench, wherein the source region and portions of the body layer delimited by said first side identify an emitter region, and portions of the body layer delimited by a second side of the trench opposite the first side identify a dummy emitter region, wherein forming the gate region comprises forming the gate region along a first wall of the trench facing the emitter region, and forming a dummy gate region in said trench, said dummy gate region being electrically isolated from said gate region and extending along a second wall of the trench opposite said first wall.