| 摘要 |
<p>FIELD: electrical equipment including semiconductor devices such as photoelectric transducers. SUBSTANCE: proposed method resulting in manufacture of high-conductivity narrow electrodes includes coating surface of gallium arsenide semiconductor wafer having p+ contact layer GaAlAs with photoresist layer, producing pattern of photoresist shielding layer above contact areas of photoelectric transducer with aid of photolithography followed by etching of p+ contact areas from semiconductor wafer surface, deposition of antireflecting insulating layer, removal of photoresist, formation of photoresist mask with expanded contact area pattern, evaporation of contact metal, removal of photoresist, and production of electrode on underside of semiconductor wafer. Pattern of photoresist shielding layer is made in the form of alternating windows; antireflecting layer is covered with silicon layer, thick. Contact metal is evaporated after removal of photoresist, bottom layer of contact metal being chosen so as to provide for its reliable adhesion to silicon. Electrodes are built up by electroplating. Shielding nickel layer, thick, is evaporated and contact metal is etched upon removal of photoresist along electrode mask by ion-beam spraying followed by removal of silicon layer. EFFECT: greatly reduced shading of semiconductor wafer and enhanced efficiency of photoelectric transducer. 1 cl, 4 dwg</p> |
