| 摘要 |
A temperature sensor has a first FET transistor circuit, whose operating point is located at the temperature-independent point, and a second FET transistor circuit whose operating point is above this point. The voltage difference in this case depends essentially linearly on the temperature. In addition, a circuit for controlling the gain of an amplifier circuit is provided, in which the current through the amplifier circuit at low temperatures is reduced by an appropriate control of the gate voltage of a transistor serving as a current source, so that an amplification which is substantially independent of temperature is carried out.
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