| 摘要 |
PURPOSE: To provide a method and an apparatus for plasma doping using a simple constitution and the superior uniformity of impurity density introduced to the surface of a sample. CONSTITUTION: When an evacuated vessel 1 is exhausted by a pump 3 while predetermined gas is introduced from a gas supply unit 2 into the vessel 1 and high-frequency power is applied to a coil 8 by a high-frequency power source 5, and while the container 1 is maintained at predetermined pressure, plasma is generated in the vessel 1, and a substrate 9 placed on a sample electrode 6 can be plasma-doped. Then, by making boron contained as impurity in a dielectric window 7, the impurity is introduced uniformly on the surface of the substrate 9.
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