发明名称 |
Non-volatile memory device to protect floating gate from charge loss and method for fabricating the same |
摘要 |
Disclosed are a non-volatile memory device to protect a floating gate from charge loss and a method for forming the same. At least a pair of floating gate lines are formed on a semiconductor substrate. A portion of the substrate between the floating gate lines is etched to form a trench therein. A gap-fill dielectric layer is formed in the trench and also in the gap between the pair of floating gate lines. The gap-fill dielectric layer is implanted with impurities so that positive mobile ions that may permeate the floating gate through the gap-fill dielectric layer can be trapped in the gap-fill dielectric layer.
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申请公布号 |
US2004087086(A1) |
申请公布日期 |
2004.05.06 |
申请号 |
US20030692590 |
申请日期 |
2003.10.23 |
申请人 |
LEE WOOK-HYOUNG |
发明人 |
LEE WOOK-HYOUNG |
分类号 |
H01L21/76;H01L21/265;H01L21/322;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/823;H01L21/336;H01L21/320 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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