| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to prevent the surface loss of the isolation layer by forming a nitride cap on the isolation layer. CONSTITUTION: A pad oxide layer(32) and a pad nitride layer are sequentially formed on a silicon substrate(31). A field region of the substrate is exposed by patterning the pad nitride and oxide layer. A trench is formed by etching the exposed field region. An oxide layer(35) is filled in the trench and polished to expose the pad nitride layer, thereby forming an isolation layer(38). The pad nitride layer is removed. Then, a nitride cap(36a) is formed on the surface of the isolation layer.
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