发明名称 Optimized read data amplifier and method for operating the same in conjunction with integrated circuit devices incorporating memory arrays
摘要 An optimized read data amplifier for the output data path of integrated circuit memory arrays comprises a fast, low power and small on-chip area consuming circuit which is advantageously effectuated through the combined application of "current sensing" and "voltage sensing" techniques. In a particular embodiment disclosed herein, an amplifier enable signal is timed with the column read address so that the amplifier is turned "off" when not in use and both data read lines ("DR" and "DRB") are precharged "high". No clocking of the read data amplifier is required in order to obviate undesired clock latencies and pipelining and a simple mechanism is implemented such that control of power-up and power-down results in further power savings.
申请公布号 US6738302(B1) 申请公布日期 2004.05.18
申请号 US20030360146 申请日期 2003.02.07
申请人 UNITED MEMORIES, INC.;SONY CORPORATION 发明人 PARRIS MICHAEL C.;HARDEE KIM C.
分类号 H03F3/45;G11C7/06;G11C11/409;G11C11/4091;(IPC1-7):G11C7/06 主分类号 H03F3/45
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