| 摘要 |
FIELD: pulse engineering; shaping control pulses across diode load. ^ SUBSTANCE: integrated shaper has first and second n-p-n transistors 1, 2; emitter of transistor 1 is connected to first power bus 7 and collector is directly connected to emitter and base of transistor 2, respectively, through first and second diodes 3 and 4; collector of transistor 2 is connected to power bus 8, emitter, to output bus, and base is connected through first current-setting component 6 to power bus 8. Newly introduced are third and fourth n-p-n transistors 9, 10 and second current-setting component 11; base of transistor 9 is connected to input bus, emitter, to base of transistor 1, and collector is connected to base of transistor 10 and through second current-setting component 11, to power bus 8; emitter of transistor 10 is connected to base of transistor 2 and collector, to power bus 8. First and second current-setting components 6 and 11 are built around p-n-p transistors. ^ EFFECT: enhanced speed, reduced power requirement and output pulse symmetry. ^ 1 cl, 1 dwg |
