Boron rich nitride cap for total ionizing dose mitigation in SOI devices

摘要

A semiconductor-on-insulator (SOI) structure that includes a cap layer composed of a boron-rich compound or doped boron nitride located between a top semiconductor layer and a buried insulator layer is provided. The cap layer forms a conductive path between the top semiconductor layer and the buried insulator layer in the SOI structure to dissipate total ionizing dose (TID) accumulated charges, thus advantageously mitigating TID effects in fully depleted SOI transistors.

主权项

1. A semiconductor-on-insulator (SOI) structure comprising:
a handle substrate comprising a first semiconductor material; an insulator layer located over the handle substrate; a cap layer located over and in direct contact with the insulator layer, the cap layer comprising a boron-rich compound selected from the group consisting of carbon boron nitride (CBN), boron silicon (BSi), and boron silicon oxide (BSiO); and an SOI layer comprising a second semiconductor material and located over and in direct contact with the cap layer.