| 发明名称 | Solid-state image pickup device, method of manufacturing thereof, and electronic apparatus | ||
| 摘要 | Provided is a solid-state image pickup device including: a plurality of pixels, each of which includes a photoelectric conversion portion and a pixel transistor formed in a front surface side of a substrate, wherein a rear surface side of the substrate is set as a light receiving plane of the photoelectric conversion portion; and an element, which becomes a passive element or an active element, which is disposed in the front surface side of the substrate so as to be superimposed on the photoelectric conversion portion. | ||
| 申请公布号 | US9484383(B2) | 申请公布日期 | 2016.11.01 |
| 申请号 | US201514855775 | 申请日期 | 2015.09.16 |
| 申请人 | Sony Corporation | 发明人 | Kiyota Yukihiro;Mabuchi Keiji |
| 分类号 | H04N5/76;H01L27/146;H04N5/369;H04N5/378 | 主分类号 | H04N5/76 |
| 代理机构 | Michael Best & Friedrich LLP | 代理人 | Michael Best & Friedrich LLP |
| 主权项 | 1. A solid-state image pickup device comprising: a semiconductor substrate including a front surface side, a rear surface side, and an interior between the front surface side and the rear surface side; a plurality of pixels, at least one pixel including a photoelectric conversion portion configured to receive incident light traveling from the rear surface side, the photoelectric conversion portion disposed within the interior at the rear surface side, and an imaging pixel transistor disposed within the interior at the front surface side, wherein the rear surface side corresponds to a light receiving plane of the photoelectric conversion portion; and an active or passive pixel element disposed within the interior at the front surface side so as to be superimposed on the photoelectric conversion portion. | ||
| 地址 | Tokyo JP | ||